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ZVN4525E6
ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNI CONDITIONS.
T
STATIC
Drain-Source Breakdown Voltage
V (BR)DSS
250
285
V
I D =1mA, V GS =0V
Zero Gate Voltage Drain Current
Gate-Body Leakage
I DSS
I GSS
35
±1
500
±100
nA
nA
V DS =250V, V GS =0V
V GS = ± 40V, V DS =0V
I =1mA, V DS = V GS
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance (1)
Forward Transconductance (3)
V GS(th)
R DS(on)
g fs
0.8
0.3
1.4
5.6
5.9
6.4
0.475
1.8
8.5
9.0
9.5
V
?
?
?
S
D
V GS =10V, I D =500mA
V GS =4.5V, I D =360mA
V GS =2.4V, I D =20mA
V DS =10V,I D =0.3A
DYNAMIC (3)
Input Capacitance
C iss
72
pF
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
11
3.6
pF
pF
V DS =25 V, V GS =0V,
f=1MHz
SWITCHING (2) (3)
Turn-On Delay Time
t d(on)
1.25
ns
Rise Time
Turn-Off Delay Time
Fall Time
t r
t d(off)
t f
1.70
11.40
3.5
ns
ns
ns
V DD =30V, I D =360mA
R G =50 ? , V qs =10V
(refer to test circuit)
Total Gate Charge
Q g
2.6
3.65
nC
Gate-Source Charge
Gate Drain Charge
Q gs
Q gd
0.2
0.5
0.28
0.70
nC
nC
V DS =25V,V GS =10V,
I D =360mA(refer to
test circuit)
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V SD
0.97
V
T j =25°C, I S =360mA,
V GS =0V
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
t rr
Q rr
186
34
260
48
ns
nC
T j =25°C, I F =360mA,
di/dt= 100A/ μ s
(1) Measured under pulsed conditions. Width=300 μ s. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - MARCH 2001
4
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